Reversible dielectric breakdown in ultrathin Hf based high-k stacks under current-limited stresses
نویسندگان
چکیده
The effects of a current-limited breakdown (BD) on the post-BD current of MOS capacitors with a thin high-k dielectric stack have been analysed. A strong current reduction after BD and, consequently, a partial recovery of the insulating properties of the dielectric stack is observed. The similarities with the Resistive Switching phenomenon observed in MIM structures for memory applications are discussed.
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ورودعنوان ژورنال:
- Microelectronics Reliability
دوره 49 شماره
صفحات -
تاریخ انتشار 2009